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Simulating leakage with SI transitors

Started by scotheath, March 05, 2022, 10:57:42 PM

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scotheath

"Silicon transistors aren't "lossy" like germanium ones, so you just have to simulate the leakage in some way"
I've seen this kind of wordage on many sites when talking about using SI in circuits designed for germanium. I've put together a few PCBs RM, FF and TB from tayda and used SI in all w/out issue except the TB, with help on this forum got it going. In simple terms what does the above statement mean? Do the PCBs I've mentioned above have some kind of simulated leakage in the circuit ? How do you simulate leakage in a circuit?

Thewintersoldier

I have tried simulating leakage on Si better never had good results sound wise. In all honesty it really is only needed in cetain circuits and in certain spots in the circuit. RM and FF you dont actually want leakage. In a TB you really only need it in Q1 and Q3 fora MK2 and Q3 in a MK3. To simulate leakage you need to add resistance between the base and collector of the transistor. I've had fantastic results doing this with germanium but never silicon.
Who the hell is Bucky?

scotheath